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Atomistic aspects of ductile responses of cubic silicon carbide during nanometric cutting [сообщение #464330] Втр, 24 Ноябрь 2020 07:47 Переход к следующему сообщения
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Atomistic aspects of ductile responses of cubic silicon carbide during nanometric cutting

Cubic silicon carbide (SiC)www.hslabrasive.com is an extremely hard and brittle material having unique blend of material properties which makes it suitable candidate for microelectromechanical systems and nanoelectromechanical systems applications. Although, SiC can be machined in ductile regime at nanoscale through single-point diamond turning process, the root cause of the ductile response of SiC has not been understood yet which impedes significant exploitation of this ceramic material. In this paper, molecular dynamics simulation has been carried out to investigate the atomistic aspects of ductile response of SiC during nanometric cutting process. Simulation results show that cubic SiC undergoes sp3-sp2 order-disorder transition resulting in the formation of SiC-graphene-like substance with a growth rate dependent on the cutting conditions. The disorder transition of SiC causes the ductile response during its nanometric cutting operations. silicon carbide abrasiveIt was further found out that the continuous abrasive action between the diamond tool and SiC causes simultaneous sp3-sp2 order-disorder transition of diamond tool which results in graphitization of diamond and consequent tool wear.
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Re: Atomistic aspects of ductile responses of cubic silicon carbide during nanometric cutting [сообщение #511629 ответ на 464330 ] Сбт, 09 Январь 2021 12:42 Переход к предыдущему сообщения
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